preliminary datasheet general purpose itvs, 4 i/os, c i/o-vss <1.1pf, v cc AT1042 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 1 general description bcd itvs (integrated transient voltage suppression) devices are designed and built using a bcd proprietary process based on bcd standard technology. these devices integrate the various diodes, transistors and resistors requ ired to build these itvs products. these diodes and transistors feature low parasitic resistance and the diodes also exhibit low capacitance. using these devices, bcd is able to design voltage clamping products where low capacitance associated with low dynamic resistance is required. the bcd AT1042 is a general purpose, high performance and low cost device suitable for protecting high speed data in terfaces. the AT1042 is a unique design integrating low capacitance steering diodes and a clamping cell, specially created to protect sensitive components connected to data and transmission lines. the AT1042 is available in sot-23-6 package. this package allows simple an d optimal placement in existing high-speed pcb layout. figure 1. package type of AT1042 sot-23-6 f ea t ures ? low clamping voltage: typical 6.5v at 10a 100ns, tlp, vcc to vss typical 9v at 10a 100ns, tlp, i/o to vss 8.5v at 9a 8 s/20 s, vcc to vss 9v at 5a 8 s/20 s, i/o to vss ? iec 61000-4-2: 22kv (vcc to vss, air) 22kv (vcc to vss, contact) ? iec 61000-4-2: 15kv (i/o to vss, air) 15kv (i/o to vss, contact) ? iec 61000-4-5: 9a (vcc to vss) ? iec 61000-4-5: 5a (i/o to vss) ? input capacitance from i/o to vss: 0.65pf ? tlp dynamic resistance, i/o to vss: 0.25 ? monolithic silicon technology application ? usb 2.0 power/data lines protection ? hdmi 1.3, high definition multi media ? ieee 1394 ? laptop and personal computers ? flat panel displays ? video graphics cards ? sim ports
preliminary datasheet general purpose itvs, 4 i/os, c i/o-vss <1.1pf, v cc AT1042 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 2 pin configuration k6 package (sot-23-6) 1 2 34 5 pin 1 mark 6 figure 2. pin configuration of AT1042 (top view) circuit diagram figure 3. circuit diagram of AT1042
preliminary datasheet general purpose itvs, 4 i/os, c i/o-vss <1.1pf, v cc AT1042 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 3 ordering information AT1042 a - a circuit type package k6: sot-23-6 package temperature range part number marking id packing type sot-23-6 -55 to 85c AT1042k6- 5.0trg1 gjo tape & reel bcd semiconductor's pb-free products, as designated with "g1" suffix in the part number, are rohs compliant and green. absolute maximum ratings (note 1) parameter symbol value unit peak pulse current (tp 8 s/20 s), vcc to vss i pp(vcc-vss) 9 a peak pulse current (tp 8 s/20 s) , i/o to vss i pp(i/o-vss) 5 a operating voltage (dc) 5.5 v iec61000-4-2 esd (air) vcc to vss 22 kv i/o to vss, vcc floating 15 iec61000-4-2 esd (contact) vcc to vss 22 kv i/o to vss, vcc floating 15 iec61000-4-5 (lightning) vcc to vss 9 a 75 w i/o to vss 5 a 45 w lead temperature (soldering, 10sec) t lead 260 oc operating temperature -55 to 85 oc storage temperature -55 to 150 oc note 1: stresses greater than those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional op eration of the device at these or any other conditions beyond those indicated under ?recommended operating co nditions? is not implied. exposure to ?absolute maximum ratings? for extended periods may affect device reliability. g1: green tr: tape & reel 5.0: fixed output 5.0v
preliminary datasheet general purpose itvs, 4 i/os, c i/o-vss <1.1pf, v cc AT1042 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 4 electrical characteristics t a =25oc, unless otherwise specified. parameter symbol conditions min typ max unit working voltage, vcc to vss pin 5 to pin 2 -0.7 5.0 v channel leakage current i r-ch v cc =5v,v ss =0v 1 a reverse breakdown voltage, vcc to vss v br i bv =1ma 5.5 v holding voltage v h 5.25 v clamping voltage (lightning) (iec61000-4-5) vcc to vss at 9a 8.5 v i/o to vss at 5a 9 v trigger voltage vcc to vss v trig 8 v i/o to vss 9 v esd clamping voltage vcc to vss at 10a, tlp, 100ns 7 v i/o to vss 9 v differential clamping resistance vcc to vss r diff-f 0.1 typical performance characteristics t a =25c, unless otherwise specified. figure 4. bv, trigger voltage, holding voltage figure 5. current vs. voltage vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 bv, trigger voltage, holding voltage (v) temperature ( o c) bv v trig v h 012345678910 0 2 4 6 8 10 voltage from i/o to vss (v) current from i/o to vss (a) current from vcc to vss (a) voltage from vcc to vss (v) vcc to vss i/o to vss
preliminary datasheet general purpose itvs, 4 i/os, c i/o-vss <1.1pf, v cc AT1042 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 5 typical performance characteristics (continued) t a =25c, unless otherwise specified. figure 6. clamping voltage figure 7. input capacit ance vs. input voltage vs. current from i/o to vss (8 s/20 s) figure 8. waveform of i/o to gnd (positive) figure 9. waveform of vcc to vss (positive) v clamping =8.9v 2v/div current waveform, (surge, 8x20 s, i pp =5.1a) 2a/div time 10 s/div 012345 0.0 0.2 0.4 0.6 0.8 1.0 input capacitance (pf) input voltage (v) f=1mhz, v cc =4.8v, v ss =0v v clamping =7.9v 2v/div current waveform, (surge, 8x20 s, i pp =8.8a) 2a/div time 10 s/div 123456 7.0 7.5 8.0 8.5 9.0 9.5 iec 61000-4-5 (lightning) clamping voltage (v) current from i/o to vss (a)
preliminary datasheet general purpose itvs, 4 i/os, c i/o-vss <1.1pf, v cc AT1042 jan. 2013 rev. 2. 2 bcd semiconductor manufacturing limited 6 mechanical dimensions sot-23-6 2.650(0.104) 2.950(0.116) 1.500(0.059 ) 1.700(0.067 ) unit: mm(inch) m i n mm(inch) max
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